반도체 용어사전 위키

The Czochralski or CZ crystal growth technique is the most frequently used method for producing large single crystals of silicon (also germanium or gallium-arsenide). In the CZ method a cylindrical single crystal is pulled vertically from silicon melt in a heated crucible. The growth is initiated by dipping a small seed crystal in the melt, and after the thermal equilibrium is reached, the crystal is pulled upwards so that it grows with a constant diameter. At the same time, the crystal rod and the crucible are rotated in opposite directions. These crystal rods are cut into thin wafers and processed to be used in integrated circuit (IC) manufacturing. (출처 : 세미파크)