반도체 용어사전 위키

a model describing kinetics of thermal oxidation of silicon for oxides thicker than about 30 nm; based on chemical reaction between silicon and oxidizing species; assumes surface reaction controlled oxide growth in early stage of oxidation (linear regime) and controlled by diffusion of oxidizing species through the oxide during extended oxidation (parabolic regime); one among the best established models in silicon processing. (출처 : 세미파크)